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单晶硅高效制绒方法的研究的中期报告Abstract:Thismid-termreportsummarizestheprogressoftheresearchonhigh-efficiencyfabricatingmethodofmonocrystallinesilicon.Thereportintroducesthepreparationprocessofmonocrystallinesilicon,analyzesthecurrentresearchprogressofmonocrystallinesilicon,andproposesthekeyissuesintheresearchprocess.Inthepreparationprocessofmonocrystallinesilicon,emphasisisplacedontheanalysisoftheinfluencesofmeltingandgrowthtemperature,aswellasthecontrolofpurificationprocess.Intheanalysisofthecurrentresearchprogress,emphasisisplacedontheanalysisoftheinfluenceofthechemicalenvironmentandthedevelopmentofthegrowthprocess.Inthediscussionofthekeyissues,emphasisisplacedontheanalysisofthecrystalgrowthprocess,theimprovementofthegrowthperformance,andtheoptimizationofthegrowthenvironment.Introduction:Thehigh-efficiencyfabricatingmethodofmonocrystallinesiliconisanimportanttopicintheresearchofmaterialsscience,whichisofgreatsignificancetothedevelopmentofthemicroelectronicsindustry.Inrecentyears,withtherapiddevelopmentofmicroelectronicstechnology,thedemandforhigh-qualitymonocrystallinesiliconhasbeenincreasing.Therefore,itisparticularlyimportanttostudythehigh-efficiencyfabricatingmethodofmonocrystallinesilicon.Preparationprocessofmonocrystallinesilicon:Thepreparationprocessofmonocrystallinesiliconincludesmelting,growth,andpurification.Inthemeltingprocess,therawmaterialsiliconisfirstmeltedinahigh-temperaturefurnace.Duringthemeltingprocess,thetemperatureneedstobestrictlycontrolledtoensurethatthemeltingprocessissmoothandtoavoidtheformationofimpuritiesinthemeltingprocess.Inthegrowthprocess,themeltedsiliconisthencrystallizedintoamonocrystallinestructurethroughagrowthprocess.Duringthegrowthprocess,thegrowthtemperatureneedstobestrictlycontrolledtoensurethestabilityofthegrowthprocessandthequalityofthecrystal.Inthepurificationprocess,theimpuritiesinthecrystalareremovedtoimprovethequalityofthecrystal.Currentresearchprogressofmonocrystallinesilicon:Atpresent,theresearchonhigh-efficiencyfabricating
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