GaAs半导体纳米线的光导特性研究中期报告摘要：本文介绍了针对GaAs半导体纳米线的光导特性研究的中期报告。实验结果表明，GaAs半导体纳米线具有优异的光学性质，并且在一定尺寸范围内存在光导作用。采用原子力显微镜测量了纳米线的直径和长度，分别为100nm和数微米级。通过光学显微镜观察到纳米线在各个方向上均匀发出光线。采用光学谱仪进行光学性质测试，获得了纳米线的光致发光谱和荧光谱，说明纳米线具有良好的光学发光性能。进一步进行了激光外延及等离子体刻蚀制备纳米线阵列，制备出了具有优异光导效果的阵列样品。关键词：GaAs半导体纳米线；光导特性；光致发光谱；荧光谱；纳米线阵列Introduction:GaAssemiconductornanowireshaveattractedgreatattentionduetotheiruniqueelectricalandopticalproperties.Inparticular,theirlightguidingpropertieshavepotentialapplicationsinoptoelectronicsandphotonics.Inthismidtermreport,wepresenttheresultsofourongoingstudyonthelightguidingpropertiesofGaAssemiconductornanowires.ExperimentalMethodology:GaAssemiconductornanowiresweresynthesizedusingmetal-organicvapor-phaseepitaxy(MOVPE)onann-typeGaAs(111)Bsubstrate.Thediameterandlengthofthenanowiresweremeasuredusingatomicforcemicroscopy(AFM)andscanningelectronmicroscopy(SEM).Theopticalpropertiesofthenanowireswerestudiedusingafluorescencespectrometerandanopticalmicroscope.ResultsandDiscussion:SEMimagesshowedthattheGaAsnanowireshadadiameterofapproximately100nmandlengthofafewmicrometers.Opticalmicroscopyimagesrevealedthatthenanowiresemittedlightinalldirections.Fluorescencespectraandphotoluminescencespectraofthenanowireswereobtainedusingafluorescencespectrometer,whichindicatedtheexcellentopticalpropertiesofthenanowires.Laserepitaxialgrowthandplasmaetchingwereusedtoproducenanowirearrayswithexcellentlightguidingproperties.Conclusion:Inconclusion,GaAssemiconductornanowireshaveexcellentopticalpropertiesandcanexhibitlightguidingpropertieswithinacertainrangeofsizes.ThroughacombinationofMOVPE,AFM,SEM,fluorescencespectroscopy,andplasmaetchingtechniques,nanowirearrayswithexcellentlightguidingpropertieshavebeenproduced.ThisresearchprovidespotentialapplicationsforGaAssemiconductornanowiresinoptoelectronicsandphotonics.