GaN基发光二极管结构设计对改善内量子效率下降的研究的开题报告摘要：随着半导体照明技术的发展，GaN基发光二极管（LED）作为一种新型的照明源得到广泛应用。然而，内量子效率下降是影响GaN基LED性能和寿命的重要因素之一。本文旨在研究GaN基LED结构设计对改善内量子效率下降的影响，以提高LED的性能和寿命。首先，将对GaN基LED内量子效率下降的原因进行分析，包括晶格不匹配、缺陷密度、量子阱设计等因素。其次，将介绍一些常用的结构设计方法，包括引入衬底模板、应力调节层、异质结构掺杂等。这些方法可以降低缺陷密度、改善晶格匹配和阻止杂质扩散，从而提高内量子效率。本文的研究方法将采用仿真计算和实验验证相结合的方法。首先，利用数值模拟软件进行结构设计和性能分析。然后，根据仿真结果制备样品，进行电性能、光学性能和寿命测试，验证结构设计对改善内量子效率下降的影响。本研究的结果将有助于深入了解GaN基LED内量子效率下降的原因，提高LED的效率和寿命，促进GaN基LED技术的发展。关键词：GaN基LED；内量子效率下降；结构设计；性能提升；寿命延长。Abstract:Withthedevelopmentofsemiconductorlightingtechnology,GaN-basedlight-emittingdiodes(LEDs)havebeenwidelyusedasanewtypeoflightingsource.However,thedecreaseofinternalquantumefficiencyisoneoftheimportantfactorsaffectingtheperformanceandlifespanofGaN-basedLEDs.ThispaperaimstostudytheeffectofLEDstructuraldesignonimprovingthedecreaseofinternalquantumefficiencyinordertoimprovetheperformanceandlifespanofLEDs.First,thereasonsforthedecreaseofinternalquantumefficiencyinGaN-basedLEDswillbeanalyzed,includinglatticemismatch,defectdensity,andquantumwelldesignfactors.Secondly,somecommonstructuraldesignmethodswillbeintroduced,includingtheintroductionofsubstratetemplates,stressadjustmentlayers,andheterojunctiondoping.Thesemethodscanreducedefectdensity,improvelatticematching,andpreventimpuritydiffusion,therebyimprovinginternalquantumefficiency.Theresearchmethodofthispaperwilluseacombinationofsimulationcalculationandexperimentalverification.First,numericalsimulationsoftwarewillbeusedforstructuraldesignandperformanceanalysis.Then,accordingtothesimulationresults,sampleswillbepreparedforelectricalperformance,opticalperformance,andlifespantestingtoverifytheeffectofstructuraldesignonimprovingthedecreaseofinternalquantumefficiency.TheresultsofthisstudywillhelptodeepentheunderstandingofthereasonsforthedecreaseofinternalquantumefficiencyinGaN-basedLEDs,improvetheefficiencyandlifespanofLEDs,andpromotethedevelopmentofGaN-basedLEDtechnology.Keywords:GaN-basedLED;decreaseofinternalquantumefficiency;structuraldesig