第1章可制造性设计工具SentaurusTCAD2/1173/1174/1175/1176/1177/1178/1179/11710/11711/11712/11713/117(3)工艺步骤说明语句deposit:用于淀积一个新的层次。diffuse:用于高温扩散和高温氧化。etch:用于刻蚀。implant:实现离子注入。mask:用于定义掩膜版。photo:淀积光刻胶。strip:去除表面的介质层。stress:用于计算应力。15/11716/11717/11718/11719/11720/11721/11722/11723/11724/11725/11726/11727/11728/11729/11730/11731/11732/11733/11734/11735/11736/11737/11738/11739/11740/11741/11742/11743/11744/11745/11746/11747/11748/11749/11750/11751/11752/11753/11754/11755/11756/11757/11758/11759/11760/11761/11762/11763/11764/11765/11766/11767/11768/11769/11770/11771/11772/11773/11774/11775/11776/11777/11778/11779/11780/11781/11782/11783/11784/11785/11786/11787/11788/11789/11790/11791/11792/11793/11794/11795/11796/11797/11798/11799/117100/117101/117102/117103/117104/117105/117106/117107/117108/117109/117110/117111/117112/117113/117114/117115/117116/117117/117