September2000QFETTMFQA11N90FQA11N90900VN-ChannelMOSFETGeneralDescriptionFeaturesΩTheseN-Channelenhancementmodepowerfieldeffect•11.4A,900V,RDS(on)=0.96@VGS=10VtransistorsareproducedusingFairchild’sproprietary,•Lowgatecharge(typical72nC)planarstripe,DMOStechnology.•LowCrss(typical30pF)Thisadvancedtechnologyhasbeenespeciallytailoredto•Fastswitchingminimizeon-stateresistance,providesuperiorswitching•100%avalanchetestedperformance,andwithstandhighenergypulseinthe•Improveddv/dtcapabilityavalancheandcommutationmode.Thesedevicesarewellsuitedforhighefficiencyswitchmodepowersupply.D!"!""G!"TO-3P!GDSFQASeriesSAbsoluteMaximumRatingsTC=25°CunlessotherwisenotedSymbolParameterFQA11N90UnitsVDSSDrain-SourceVoltage900VIDDrainCurrent-Continuous(TC=25°C)11.4A-Continuous(TC=100°C)7.2AIDMDrainCurrent-Pulsed(Note1)45.6AVGSSGate-SourceVoltage±30VEASSinglePulsedAvalancheEnergy(Note2)1000mJIARAvalancheCurrent(Note1)11.4AEARRepetitiveAvalancheEnergy(Note1)30mJdv/dtPeakDiodeRecoverydv/dt(Note3)4.0V/nsPDPowerDissipation(TC=25°C)300W-Derateabove25°C2.38W/°CTJ,TSTGOperatingandStorageTemperatureRange-55to+150°CMaximumleadtemperatureforsolderingpurposes,T300°CL1/8"fromcasefor5secondsThermalCharacteristicsSymbolParameterTypMaxUnitsRθJCThermalResistance,Junction-to-Case--0.42°C/WRθCSThermalResistance,Case-to-Sink0.24--°C/WRθJAThermalResistance,Junction-to-Ambient--40°C/W©2000FairchildSemiconductorInternationalRev.A,September2000FQA11N90ElectricalCharacteristicsTC=25°CunlessotherwisenotedSymbolParameterTestConditionsMinTypMaxUnitsOffCharacteristicsµBVDSSDrain-SourceBreakdownVoltageVGS=0V,ID=250A900----V∆BVBreakdownVoltageTemperatureDSSI=250µA,Referencedto25°C∆D--1.0--V/°C/TJCoefficientIDSSVDS=900V,VGS=0V----10µAZeroGateVoltageDrainCurrentVDS=720V,TC=125°C----100µAIGSSFGate-BodyLeakageCurrent,ForwardVGS=30V,VDS=0V----100nAIGSSRGate-BodyLeakageCurrent,ReverseVGS=-30V,VDS=0V-----100nAOnCharacteristicsµVGS(th)GateThresholdVolt