苏州科技学院本科生毕业设计化学抛光技术在晶体材料中的应用研究摘要化学抛光技术是目前唯一能获得全局平面化效果的平整化技术。本文主要研究石榴石晶体的化学抛光工艺。进行不同化学抛光液抛光后效果对比实验，室温与高温抛光后效果对比实验，不同抛光时间后的效果对比实验。将抛光后的晶片利用原子力显微镜等仪器进行表面形貌的测试。经过比较分析得到：在室温下，H2SO4、H2O2体积比为1∶1的溶液为化学抛光液，抛光1小时，此工艺为石榴石晶片合适的化学抛光工艺。抛光后晶片表面在10×10µm2范围内平均粗糙度达到0.3536nm，与传统商用硅片抛光后效果相当。此抛光工艺的获得，解决了石榴石晶体在应用于高能激光器时由于表面粗糙影响输出功率的问题。关键词化学抛光；Yb:YAG晶体；原子力显微镜；平均粗糙度StudyonchemicalpolishingofcrystalsmaterialAbstractChemicalpolishingistheonlytechnologytoachievetheoverallplanecurrently.Inthispaper,chemicalpolishingofthegarnetcrystalisstudied.Comparingtheeffectofdifferentchemicalpolishingsolutiononpolishingthesample,thesamplepolishingatroomtemperatureandhightemperature,differentpolishingtimeonthesamplespolished.Usingatomicforcemicroscopyandotherequipmenttotestthesurfacemorphologyofthesamplespolished.Aftercomparisonandanalysis,weknowthatatroomtemperature,usingsolutionofH2SO4、H2O2volumeratioof1∶1asachemicalpolishingsolutionandpolishingonehour,aresuitablechemicalpolishingtechnologyofgarnetwafer.Thesurfaceaverageroughnessofthegarnetwaferpolishedreached0.3536nmintherangeof10×10μm2,almostthesameroughnessasthesiliconwaferpolishedwhichisusedintraditionalindustry.Asweknow,surfaceroughnessofthegarnetcrystalusedinhigh-energylaseraffectstheoutputpower.Thepolishingtechnologywetalkedaboutsolvestheproblem.Keywordschemicalpolishing;Yb:YAGcrystal;AFM;theaverageroughness目录TOC\o"1-3"\h\z\uHYPERLINK\l"_Toc232988505"1绪论PAGEREF_Toc232988505\h1HYPERLINK\l"_Toc232988506"1.1化学抛光的应用背景PAGEREF_Toc232988506\h1HYPERLINK\l"_Toc232988508"1.2几种常见的化学机械抛光工艺PAGEREF_Toc232988508\h3HYPERLINK\l"_Toc232988509"1.3应用化学抛光技术的实例PAGEREF_Toc232988509\h4HYPERLINK\l"_Toc232988510"1.4石榴石基质特性及典型石榴石晶体Yb:YAG晶体PAGEREF_Toc232988510\h5HYPERLINK\l"_Toc232988511"2实验方法PAGEREF_Toc232988511\h7HYPERLINK\l"_Toc232988512"2.1晶体生长及加工PAGEREF_Toc232988512\h7HYPERLINK\l"_Toc232988513"2.2化学抛光PAGEREF_Toc232988513\h9HYPERLINK\l"_Toc232988514"2.3显微镜原理PAGEREF_Toc2