如果您无法下载资料,请参考说明:
1、部分资料下载需要金币,请确保您的账户上有足够的金币
2、已购买过的文档,再次下载不重复扣费
3、资料包下载后请先用软件解压,在使用对应软件打开
LED基本原理CharacterizationofSemiconductorMaterialsSemiconductorCategoriesLEDCategoriesbyApplicationsPlanetaryModelofAtomsPlanetaryModelofAtomsWhenSemiconductorAtomsMeetEachOtherWhenAtomsComeClosetoEachOthersEnergyBandsinSemiconductorsElectronsandHolesinSemiconductorsDopingofN-TypeSiDopingofP-TypeSiHoleMovementIII-VCompoundSemiconductor-GaAsIII-VCompoundSemiconductor-GaNDopingofCompoundSemiconductorDopingofCompoundSemiconductorN-TypeandP-TypeBandStructuresBandGapRepresentationDopingWhenElectronsMeetHolesRecombinationmechanisms:Radiativeandnon-radiativerecombinationRadiativeRecombinationoftheLED參考資料:http://ece-classweb.ucsd.edu/BandgapandWavelengthFrom:LumiLEDsLEDsMaterial,WavelengthsandIntensityR/G/BEmissionSpectrumHighBrightnessMaterialsSemiconductorBandgapsBandgapDeterminesLightColor