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化学气相淀积与薄膜工艺ChemicalVaporDeposition&ThinFilmTechnologyCVD技术合成无机新材料的综合研究例：CVD法制备AlN薄膜实验结果的理论解释例：CVD法制备AlN薄膜(N.Azemaetal.,1991)Example1HREMlatticeimageoftheAlNfilmdemonstratingthethreedistinctcharacteristiclayersMassspectraofammonia:Thermaldecompositionwithoutplasma;Decompositionwithplasmaapplied;MassspectraofTMAl:Thermaldecompositionwithoutplasma;Decompositionwithplasmaapplied;实例:低频等离子体MOCVD制备AlN薄膜非晶态AlN的衬底界面层,为什么?过渡层:为什么多晶AlN?-非晶态向晶态的转变10ī0取向生长,为什么不是其它取向!?reaction:Fromabove,wecanget:Case:AdsorptionanddesorptionofAl-RandH2onNsites:AdsorptionofNH3atAlsitesisstrongSchematicillustrationofthesurfaceadsorptionandreactionmodelforAlNcrystalgrowth.实验现象的解释★反应速率对反应物分压的关系★AlN薄膜的结构质量为什么不是其它取向!?★10ī0取向生长的解释例2SchematicapparatusofthemicrowaveplasmaCVDsystem.Microwavepower2450MHzXRDpatternsofAlNfilmsunderdifferentmicrowavepower:a400W;b400～450W;c450～500W;andd500W.aAlNfilmgrowthratevs.AlBr3precursortemperatureMicrowavepower:500WN220SCCMNH3:50SCCM,experimentalvalue;calculatedvalue.GrowthrateofAlNfilmsvs.depositiontemperatureAlBr3.precursortemperature:110℃，N2:20SCCMNH3:50SCCMDomainreaction:SchematicillustrationofthesurfaceadsorptionandreactionmodelforAlNcrystalgrowth.Fromabove,wecanget:Case:AdsorptionanddesorptionofAlBr3onNsites:AdsorptionofNH3atAlsitesisstrong
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