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APPLICATIONGUIDE—HETEROJUNCTIONBIPOLARTRANSISTORSUpdated2005.3c1995-2005CrosslightSoftwareInc.2Contents1InGaAs/InPHBTSimulation1-51.1Introduction..............................1-51.2ToCreateaMeshfortheHBT....................1-51.3ToRuntheMainSolver........................1-71.4Toplottheresults...........................1-81.5TunnelingEffectsonHBT.......................1-92SiGeHBTSimulation2-172.1Introduction..............................2-172.2SettingUptheGeometryInput....................2-172.3SteadyStateSimulationforGummelPlot..............2-192.4SteadyStateResults..........................2-212.5ACAnalysisfortheHBT.......................2-223Selective-EpitaxialSiGeHBT3-273.1Introduction..............................3-273.2RefiningtheInitialMesh.......................3-273.3SimulationforGummelPlot.....................3-293.4SimulationforIC−VCEcharacteristics................3-323.5ACAnalysis..............................3-333.6BandgapNarrowingEffect......................3-350-4CONTENTSChapter1InGaAs/InPHBTSimulation1.1IntroductionHeterostructurebipolartransistorisbasedontheuseofawide-bandgapemittertoremovethetradeoffbetweencurrentgainandthebasedopinglevelinabipolartransistor.CompoundsemiconductorpairssuchasAlGaAs/GaAsandInGaAs/InPareparticularattractiveforheterojunctionbipolartransistor(HBT).Inthisexample,wedemonstratethecomputersimulationforascaled(emitterdimensionis0.3×3µ2)high-gainsub-micronHBTwithInGaAs/InPcompoundsemiconductormaterials[1].TheschematicoftheInGaAs/InPHBTisgiveninFig.1.1.Thecorrespondinginputfilesformeshgeneration,meshplot,mainequationsolverandtheresultplotaregivenasfollowsin“ingaas.geo”,“ingaas.mplt”,“ingaas.sol”,“ingaas.plt”.Thegraphicoutputproducedbythesefilesaregiveninthefigurestofollow.Theexamplecanbefoundatthedirectory:apsysexamples/HBT/hbtingaas1.2ToCreateaMeshfortheHBTThemeshgeneratedbyingaas.geoisgiveninFig.1.2.$file:ingaas.geo$ThisexamplefollowsIEEEEDVol.9,pp.524,1988$***********GEOME
