InAsInP柱型量子线中隧穿时间和逃逸问题的研究的开题报告题目：InAsInP柱型量子线中隧穿时间和逃逸问题的研究摘要：本文主要研究InAsInP柱型量子线的隧穿时间和逃逸问题。首先介绍了量子线的基本结构和制备方法，然后介绍了量子力学中的隧穿效应及其在半导体器件中的应用。接着，利用紧束缚近似（TightBindingApproximation）理论，建立了InAsInP柱型量子线的哈密顿量，并采用数值计算方法模拟了在不同电场下的电子隧穿概率和隧穿时间。最后，讨论了InAsInP柱型量子线的逃逸问题，包括电子在量子线内逃逸和量子线与周围介质的耦合导致的能量逃逸。通过透彻分析光电场和局域谐振等现象，提出一种有效的逃逸抑制方法。关键词：InAsInP柱型量子线、隧穿效应、逃逸问题、紧束缚近似、逃逸抑制方法。Abstract:ThispapermainlystudiesthetunnelingtimeandescapeprobleminInAsInPpillarquantumwires.Firstly,thebasicstructureandpreparationmethodofquantumwiresareintroduced,andthenthetunnelingeffectinquantummechanicsanditsapplicationinsemiconductordevicesareintroduced.Then,theHamiltonianofInAsInPpillarquantumwireisestablishedbythetight-bindingapproximationtheory,andtheelectrontunnelingprobabilityandtunnelingtimeunderdifferentelectricfieldsaresimulatedbynumericalcalculationmethod.Finally,theescapeproblemofInAsInPpillarquantumwireisdiscussed,includingelectronescapeinthequantumwireandenergyescapecausedbythecouplingbetweenthequantumwireandthesurroundingmedium.Byanalyzingthephenomenonofphotoelectricfieldandlocalizedharmonics,aneffectiveescapesuppressionmethodisproposed.Keywords:InAsInPpillarquantumwire,tunnelingeffect,escapeproblem,tightbindingapproximation,escapesuppressionmethod.