GaN基垂直结构LED电镀铜衬底的研究的中期报告【摘要】本研究旨在探究GaN基垂直结构LED电镀铜衬底工艺的优化和相应性能的提升。通过对不同工艺参数的优化，并使用场发射扫描电子显微镜（FESEM）、原子力显微镜（AFM）、能谱分析仪（EDS）等表征手段对样品进行表征，研究表明，不同电镀温度、电镀时间以及温升速率对铜镀层的成分、晶体结构和电化学性能均有影响。在铜现象区增加外加还原体积电流密度和缩短电解时间，铜镀层的表面形貌变得更加平整，坑洞和晶界明显减少。同时，使用电化学阻抗谱进行分析，发现优化后的样品具有更低的交流阻抗和更高的直流导电性，表明铜镀层的致密性和电导率得到了显著提升，这将有助于优化GaN基垂直LED器件在高功率和高频应用中的性能。【关键词】GaN基垂直结构LED；电镀铜衬底；工艺优化；表征分析；性能提升。【Abstract】TheaimofthisstudyistoexploretheoptimizationoftheprocessofelectroplatingcoppersubstrateforGaN-basedverticalstructureLEDandtheimprovementofitscorrespondingperformance.Byoptimizingthedifferentprocessparametersandusingcharacterizationtechniquessuchasfieldemissionscanningelectronmicroscopy(FESEM),atomicforcemicroscopy(AFM),andenergy-dispersivespectroscopy(EDS),itisfoundthatdifferentelectroplatingtemperatures,electroplatingtimes,andheatingrateshaveanimpactonthecomposition,crystalstructure,andelectrochemicalpropertiesofthecopperplatinglayer.Increasingthevolumecurrentdensityandshorteningtheelectrolysistimeinthecopperdepositionzone,thesurfacemorphologyofthecopperplatinglayerbecomesflatterwithobviousreductionofpitsandgrainboundaries.Atthesametime,usingelectrochemicalimpedancespectroscopyanalysis,itisfoundthattheoptimizedsampleshavelowerACimpedanceandhigherDCconductivity,indicatingthatthecompactnessandconductivityofthecopperplatinglayeraresignificantlyimproved,whichwillhelptooptimizetheperformanceofGaN-basedverticalLEDdevicesinhigh-powerandhigh-frequencyapplications.【Keywords】GaN-basedverticalstructureLED;electroplatingcoppersubstrate;processoptimization;characterizationanalysis;performanceimprovement.