Si衬底GaN基LED器件结构设计及有源区内电流分布的研究的中期报告摘要：随着LED市场的日益壮大，对GaN基LED器件的研究越来越受到关注。本文针对Si衬底GaN基LED器件结构设计及有源区内电流分布进行了研究。首先，通过模拟计算和实验测量，对不同Si衬底厚度的LED器件的光电特性进行了分析，得出了最优的Si衬底厚度为2.5μm。然后，针对该器件的结构进行了优化设计，包括改变电极的位置和形状等。最后，通过二维数值模拟，研究了有源区内电流的分布情况。结果表明，在有源区的中心区域，电流密度较高，应特别注意散热问题。关键词：Si衬底GaN基LED；结构优化设计；有源区内电流分布Abstract:WiththegrowingLEDmarket,thestudyofGaN-basedLEDdeviceshasreceivedincreasingattention.Inthispaper,westudiedthestructuredesignofSisubstrateGaN-basedLEDdevicesandthecurrentdistributionintheactiveregion.First,theopticalandelectricalcharacteristicsofLEDdeviceswithdifferentSisubstratethicknesswereanalyzedthroughsimulationcalculationandexperimentalmeasurement,andtheoptimalSisubstratethicknessof2.5μmwasobtained.Then,thestructureofthedevicewasoptimized,includingchangingthepositionandshapeoftheelectrode.Finally,thecurrentdistributionintheactiveregionwasstudiedthroughtwo-dimensionalnumericalsimulation.Theresultsshowthatthecurrentdensityishighinthecentralareaoftheactiveregion,andspecialattentionshouldbepaidtoheatdissipation.Keywords:SisubstrateGaN-basedLED;structureoptimizationdesign;currentdistributionintheactiveregion.