半导体封装制程和设备材料知识介绍半导体封装制程概述半导体制程封装型式概述封裝型式(PACKAGE)封裝型式封裝型式封裝型式封裝型式封裝型式SanDiskAssemblyMainProcess常用术语介绍晶圆研磨(GRINDING)2.Grinding相关材料ATAPE麦拉BGinding砂轮CWAFERCASSETTLE工艺对TAPE麦拉的要求：工艺对麦拉的要求：TAPE種類:a.ADWILLD-575UV膠膜(黏晶片膠膜白色)厚度150UMb.ADWILLＧ-295黏晶片膠膜黑色厚度120UMc.ADWILLS-200熱封式膠帶(去膠膜膠帶)白色厚度７５ＵＭd.FURUKAWAUC-353EP-110AP(PRE-CUT)UV膠膜白色厚度110ume.FURUKAWAUC-353EP-110AUV膠膜白色厚110umf.FURUKAWAUC-353EP-110BPUVTAPE白色厚110um.g.ADWILLG16P370黑色厚80UM.h.NITTO224SP75UM3.Grinding辅助设备AWaferThicknessMeasurement厚度测量仪一般有接触式和非接触式光学测量仪两种；BWaferroughnessMeasurement粗糙度测量仪主要为光学反射式粗糙度测量方式；4.Grinding配套设备ATaping贴膜机BDetaping揭膜机CWaferMounter贴膜机lWafermount晶圓切割(Dicing)MainSectionsIntroductionBladeClose-ViewTwin-SpindleStructureAFewConcepts晶圓切割(Dicing)Wmax,Wmin,Lmax,DDY,DY切割時之轉速予切速:a.轉速:指的是切割刀自身的轉速b.切速:指的是Wafer移動速度.切割至膠膜時所能切割之深度UVTAPE:0.100+/-0.005mm(ForLintec)BLUETAPE:0.050+/-0.005mm(ForNittospv224)G-16Tape:0.050+/-0.005mm(ForLintecG-16)UVTape:0.08+/-0.005mm(ForFURUKAWAUC-353EP-110AP)晶圓切割(Dicing)切割刀的規格因所切產品的特性不同(Wafer材質、厚度、切割道寬度)，所需要的切割刀規格也就有所不同，其中規格就包括了刀刃長度、刀刃寬度、鑽石顆粒大小、濃度及Nickelbondhardness軟硬度的選擇，只要任何一種規格的不同，所切出來的品質也就不一樣。Sawblade对製程的影響ProperCutDepthIntoTape(切入膠膜的理想深度)切割刀的影響DiamondGritSize(鑽石顆粒大小)TAPE粘度对SAW製程的影響MountingTape(膠膜黏力)晶圓切割(Dicing)上片(DieBond)上片(DieBond)上片(DieBond)SubstrateBasicInformation上片(DieBond)BCuringOven无氧化烤箱主要控制要素：N2流量；排气量；profile温度曲线；每箱摆放Magazine数量；CWafermapping应用焊线(WireBond)FreeairballiscapturedinthechamferFreeairballiscapturedinthechamferFreeairballiscapturedinthechamferFreeairballiscapturedinthechamferFormationofafirstbondFormationofafirstbondFormationofafirstbondFormationofafirstbondCapillaryrisestoloopheightpositionCapillaryrisestoloopheightpositionCapillaryrisestoloopheightpositionCapillaryrisestoloopheightpositionCapillaryrisestoloopheightpositionFormationofaloopFormationofaloop焊线(WireBond)HowToDesignYourCapillary焊线(WireBond)PlasmaCleaning的原理：VacuumChamber等离子工艺PlasmaProcess塑封(Molding)TowaAutoMoldTrainingTowaAutoMoldTrainingTowaAutoMoldTrainin