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AOD4120N-ChannelEnhancementModeFieldEffectTransistorGeneralDescriptionFeatures1.4TheAOD4120usesadvancedtrenchtechnologyandVDS(V)=20VdesigntoprovideexcellentRDS(ON)withlowgateID=25A(VGS=10V)charge.ThisdeviceissuitableforuseinPWM,loadRDS(ON)<18mΩ(VGS=10V)switchingandgeneralpurposeapplications.StandardRDS(ON)<25mΩ(VGS=4.5V)productAOD4120isPb-free(meetsROHS&SonyR<75mΩ(V=2.5V)259specifications).AOD4120LisaGreenProductDS(ON)GSUISTested193orderingoption.AOD4120andAOD4120LareRg,Ciss,Coss,Crss18Testedelectricallyidentical.TO-252D-PAKDTopViewDrainConnectedtoTabGSGDSAbsoluteMaximumRatingsTA=25°CunlessotherwisenotedParameterSymbolMaximumUnitsDrain-SourceVoltageVDS20VGate-SourceVoltageVGS±16VGContinuousDrainTC=25°C25CurrentTC=100°CID23ACPulsedDrainCurrentIDM75CAvalancheCurrentIAR13ACRepetitiveavalancheenergyL=0.3mHEAR25mJTC=25°C33BPDWPowerDissipationTC=100°C16.7TA=25°C2.5APDSMWPowerDissipationTA=70°C1.7JunctionandStorageTemperatureRangeTJ,TSTG-55to175°CThermalCharacteristicsParameterSymbolTypMaxUnitsMaximumJunction-to-AmbientAt≤10s1725°C/WRθJAMaximumJunction-to-AmbientASteady-State4050°C/WBMaximumJunction-to-CaseSteady-StateRθJC3.64.5°C/WAlpha&OmegaSemiconductor,Ltd.AOD4120ElectricalCharacteristics(TJ=25°Cunlessotherwisenoted)SymbolParameterConditionsMinTypMaxUnitsSTATICPARAMETERSBVDSSDrain-SourceBreakdownVoltageID=250uA,VGS=0V20VVDS=16V,VGS=0V1IDSSZeroGateVoltageDrainCurrentuATJ=55°C5IGSSGate-BodyleakagecurrentVDS=0V,VGS=±16V100nAVGS(th)GateThresholdVoltageVDS=VGS,ID=250µA0.61.262VID(ON)OnstatedraincurrentVGS=10V,VDS=5V75AVGS=10V,ID=20A1418TJ=125°C21RDS(ON)StaticDrain-SourceOn-ResistancemΩVGS=4.5V,ID=10A2025VGS=2.5V,ID=4A5775gFSForwardTransconductanceVDS=5V,ID=20A19SVSDDiodeForwardVoltageIS=1A,VGS=0V0.771VGISMaximumBody-DiodeContinuousCurrent30ADYNAMICPARAMETERSCissInputCapacitance900pFCossOutputCapacitanceVGS=0V,VDS=10V,f=1MHz162pFCrssReverseTransferCapacitance105pFRgG
