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APPLICATIONGUIDE—HIGHELECTRONMOBILITYTRANSISTORUpdated2005.3c1995-2005CrosslightSoftwareInc.2Contents1HighElectronMobilityTransistor1-51.1Introduction..............................1-51.2UseofAdvancedOptions.......................1-51.3MoreAdvancedModelsofHEMT..................1-61.4ResultsofGaAs/AlGaAsHEMT...................1-71.5WurtziteStructureMaterialHEMT’s................1-91.6ApplicableProductsandOptions...................1-130-4CONTENTSChapter1HighElectronMobilityTransistor1.1IntroductionAnimportantclassofcompoundsemiconductordevicesisthehighmobilityelectronfieldeffecttransistors(HEMT).Theseincludeheterojunctionfieldeffecttransistors(HJFET),pseudomorphicheterojunctionFET,modulationdopedHeterojunctionFET,etc..Acommonfeatureofthesedevicesisthataquantumconfined2Delectrongaswithhighmobilityisusedastheconductingcarrier.Inthischapter,webrieflydescribetheapplicationofAPSYSinthesimulationofthe2Delectrongasinthesedevices.1.2UseofAdvancedOptionsInCrosslightsimulators,alayeredmaterialistreatedquantummechanically(withconfinedquantumlevelssolved)onlywhenitisdeclaredas”activequantumwell”.FormanyHJFETs,theconfiningquantumwellhasoneHeterojunctionbarrierononesideactingasapotentialbarrierwhiletheotherpotentialbarrierisformedbyconfiningelectricfield.ThisisdifferentfromtheconventionquantumwellwithtwoHeterojunctionasthetwoconfiningbarriers.WetakeasanexampleofasimpleGaAs/Al(0.4)Ga(06)AsHEMT.Inordertosimulatetheconfinedstatesinthe2Delectrongas,wemustdefineitasan”activequantumwell”muchlikethatinanMQWlaserdiode.TomakeanactivequantumwelloutofthesimpleGaAs/AlGaAsjunction,weconvertGaAs/Al(0.4)Ga(0.6)AsjunctionintoquantumwelloftheformAl(0.01)Ga(0.99)As/GaAs/Al(0.4)Ga(0.6)Aswhichhasunevenbarriers.AschematicofsuchastructureisshowninFig.1.1.Totreatuneven-barrieractivequantumwell,wemusttreatitas”complexMQW”andusethecomplex-MQWoptionwithactivelayermacroofcx-AlGaAs.Sinceoneoftheconfiningbarrierisformedbystrongelectricfield,itisimportantthatwesolvethepotenti
