SST39VF1601.pdf
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SST39VF1601.pdf

SST39VF1601.pdf

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16Mbit/32Mbit/64Mbit(x16)Multi-PurposeFlashPlusSST39VF1601/SST39VF3201/SST39VF6401SST39VF1602/SST39VF3202/SST39VF6402SST39VF160x/320x/640x2.7V16Mb/32Mb/64Mb(x16)MPF+memoriesPreliminarySpecificationsFEATURES:•Organizedas1Mx16:SST39VF1601/1602•Security-IDFeature2Mx16:SST39VF3201/3202–SST:128bits;User:128bits4Mx16:SST39VF6401/6402•FastReadAccessTime:•SingleVoltageReadandWriteOperations–70ns–2.7-3.6V–90ns•SuperiorReliability•LatchedAddressandData–Endurance:100,000Cycles(Typical)•FastEraseandWord-Program:–Greaterthan100yearsDataRetention–Sector-EraseTime:18ms(typical)www.DataSheet4U.com•LowPowerConsumption(typicalvaluesat5MHz)–Block-EraseTime:18ms(typical)–ActiveCurrent:9mA(typical)–Chip-EraseTime:40ms(typical)–StandbyCurrent:3µA(typical)–Word-ProgramTime:7µs(typical)–AutoLowPowerMode:3µA(typical)•AutomaticWriteTiming•HardwareBlock-Protection/WP#InputPin–InternalVPPGeneration–TopBlock-Protection(top32KWord)•End-of-WriteDetectionforSST39VF1602/3202/6402–ToggleBits–BottomBlock-Protection(bottom32KWord)–Data#PollingforSST39VF1601/3201/6401•Sector-EraseCapability•CMOSI/OCompatibility•JEDECStandard–Uniform2KWordsectors–FlashEEPROMPinoutsandcommandsets•Block-EraseCapability–Uniform32KWordblocks•PackagesAvailable–48-leadTSOP(12mmx20mm)•Chip-EraseCapability–48-ballTFBGA(6mmx8mm)for16Mand32M•Erase-Suspend/Erase-ResumeCapabilities–48-ballTFBGA(8mmx10mm)for64M•HardwareResetPin(RST#)PRODUCTDESCRIPTIONTheSST39VF160x/320x/640xdevicesare1Mx16,2MTheSST39VF160x/320x/640xdevicesaresuitedforappli-x16,and4Mx16respectively,CMOSMulti-PurposecationsthatrequireconvenientandeconomicalupdatingofFlashPlus(MPF+)manufacturedwithSST’sproprietary,program,configuration,ordatamemory.ForallsystemhighperformanceCMOSSuperFlashtechnology.Theapplications,theysignificantlyimproveperformanceandsplit-gatecelldesignandthick-oxidetunnelinginjectorreliability,whileloweringpowerconsumption.Theyinher-attainbetterreliabilityandmanufacturabilitycomparedentlyuselessenerg