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SimulationSimulationofofaaMetamorphicMetamorphicInAlAs/InGaAs/GaAsInAlAs/InGaAs/GaAsHEMTHEMTCopyright2005CrosslightSoftwareInc.www.crosslight.com12SchematicHEMTlayerstructure3-nmplanarSidelta-dopingIn0.45Al0.55AslayerStrainexpectedfor4-nmi-In0.45Al0.55Asspacer&20-nmi-In0.53Ga0.47Aschannellayers,butstraincouldberelaxedduetothickgrowthfor0.5-umi-In0.45Al0.55AsbarrierlayerSee:YJChenetal,APLVol85No21(2004)pp5087-50893SetupoflayerfilewithLayerbuilderFromchannellayerupward,thelayersunderS/Dregion,i.e.the1st&7thcolumnsareheavilydoped.Complexlayersincludethreelayers:channel&itstwoneighboringlayers.Auserself-modifiedmacrofilecx-ingaalas-gaas.macisenclosedtoincorporatestrain&strainrelaxaforementioned.4PreparationtorunthesimulationRight-clickhemt.layerto“Processandgenerate.geo”atfirst.Right-clickhemt.geoto“Generatemesh”.Right-clickhemt.mpltto“Viewmesh”.Docheckthemeshforanyirregularity.5Setupof.solfileHemt.solcouldbesetupviathemenu“Action\MainSimulation\Setup.sol”.Alternatively,itcouldbemodifiedwithexisting.solfilefromenclosedexamples.Toconnecttheuserself-modifiedmacrofile,thefollowingcommandlinehastobeincludedinthe.solfile.Toincorporateimpactionization,“impact_chynoweth”or“impact_baraff”commandlinehastobeaddedforeverySelfconsistentquantunmwavedensitymodelisincluded.materialNoinhemt.materfile.ExceptforchannelThescanline27belowwillbeusedtogeneratedataforlayermaterialNo,plottingACanalysesresultsvsbiasvoltage(Vgs).impactionizationcouldbesettozeroforalltheothermateriallayerNos.6Setupof.pltfileToplottranscond.GmvsVgswith“plot_slope=yes”fromIdsvsVgsdatasets.ToplotACanalysesresultsvsVgswith“versus_bias=yes”.7SimulationresultsBanddiagramatequilibrium(zerobias),2ndcolumnalongy-direction.8SimulationresultsBanddiagram(Vds=2.5&Vgs=-1.0V),2ndcolumnalongy-direction.9SimulationresultsIdsvsVdscurves(Vgsat0,-0.5,-1,-1.5,-2&-2.5Vdownward).Noticethekinkeffectduetoimpactionization.10SimulationresultsI
