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SERIALPRESENCEDETECTM470T5663QZ3-CE7/CF7/CE6/CD5/CCCOrganization:256Mx64Composition:128Mx8*16eaUsedcomponentpart#:K4T1G084QQ-HCE7/F7/E6/D5/CC#ofrowsinmodule:2Row#ofbanksincomponent:8banksFeature:30mmheight&doublesidedcomponentRefresh:8K/64msBinSort:E7(DDR2-800@CL=5),F7(DDR2-800@CL=6),E6(DDR2-667@CL=5),D5(DDR2-533@CL=4),CC(DDR2-400@CL=3)Contents:FunctionSupportedHexValueByte#FunctiondescribedNoteCE7CF7CE6CD5CCCCE7CF7CE6CD5CCC0#ofSerialPDByteswrittenduringmoduleproduction128bytes80h11TotalNumberofSPDmemorydevice256bytes(2kbit)08h22FundameatalmemorytypeDDR2SDRAM08h3#ofrowaddressonthisassembly140Eh4#ofcolumnaddressonthisassembly100Ah5#ofmodulerowsonthisassembly2Row,Planar,30.0mm61h6Datawidthofthisassembly64bits40h7Reserved-00h8VoltageinterfacelevelofthisassemblySSTL1.8V05h9DDR2SDRAMcycletimeatMax.SupportedCASlatency=X2.5ns3.0ns3.75ns5.0ns25h30h3Dh50h10DDR2SDRAMAccesstimefromclockatCL=X+/-0.40ns+/-0.45ns+/-0.5ns+/-0.6ns40h45h50h60h11DIMMconfigurationtype(address&commandparity,dataparity,Nonparity/ECC00hECC)12Refreshrate7.8us82h3,413PrimaryDDR2SDRAMwidthx808h14ErrorcheckingDDR2SDRAMdatawidthN/A00h15Reserved-00h16DDR2SDRAMdeviceattributes:Burstlengthssupported4,80Ch17DDR2SDRAMdeviceattributes:#ofbanksoneachDDR2SDRAM8banks08hdevice18DDR2SDRAMdeviceattributes:CASlatencysupported5,4,36,5,45,4,338h70h38h19DIMMMechanicalCharacteristicsX=<3.8001h20DIMMtypeinformationSODIMM04h21DDR2SDRAMmoduleattributesAnalysisprobenotinstalled,FETswitch00hexternalnotenable22DDR2SDRAMdeviceattributes:GeneralSupportsweakdriver,50OhmODT,PASR07h23DDR2SDRAMcycletimeatCL=X-13.75ns3.0ns3.75ns5.0ns3Dh30h3Dh50h324DDR2SDRAMaccesstimefromclockatCL=X-1+/-0.5ns+/-0.45ns+/-0.5ns+/-0.6ns50h45h50h60h25DDR2SDRAMcycletimeatCL=X-25.0ns3.75ns5.0ns50h3Dh50h26DDR2SDRAMaccesstimefromclockatCL=X-2+/-0.6ns+/-0.5ns+/-0.6ns60h50h60h27Minimumrowprechargetime(=tRP)12.5ns15ns32h3Ch28Minimumrowactivetorowactivedelay(=tRRD)7.5ns1Eh329MinimumRAStoCASdelay(=tRCD)12.5ns15ns32h3Ch3
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