一维ZnO纳米结构单电子器件的器件制备及传输特性中期报告摘要：本次报告主要介绍了一维ZnO纳米结构单电子器件的器件制备及传输特性的中期研究进展。首先介绍了一维ZnO纳米结构的制备方法，包括气相沉积、溶胶-凝胶法、水热法等。通过对比不同制备方法，选择了最优方法进行下一步的器件制备。在器件制备方面，采用电子束光刻和金属蒸发技术制备了单电子晶体管。实验测量了器件的电流-电压特性，并分析了电流噪声谱和热噪声谱，验证了器件的单电子传输特性。进一步研究了一维ZnO纳米线器件的传输特性，包括导电性、透过率、尺寸效应等方面。结果表明，一维ZnO纳米线器件具有良好的导电性和透过率，较强的尺寸效应。下一步的研究将集中在优化器件结构，提高器件性能以及研究器件的噪声性能等方面。关键词：一维ZnO纳米结构；单电子器件；电流-电压特性；传输特性；尺寸效应Abstract:Thisreportmainlyintroducesthemid-termresearchprogressofthepreparationandtransportcharacteristicsofone-dimensionalZnOnanostructuresingle-electrondevices.Firstly,thepreparationmethodsofone-dimensionalZnOnanostructures,includingchemicalvapordeposition,sol-gelmethod,hydrothermalmethod,etc.,wereintroduced.Bycomparingdifferentpreparationmethods,theoptimalmethodwasselectedforthenextdevicepreparation.Intermsofdevicepreparation,asingle-electrontransistorwaspreparedusingelectronbeamlithographyandmetalevaporationtechnology.Thecurrent-voltagecharacteristicsofthedevicewereexperimentallymeasured,andthecurrentnoisespectrumandthermalnoisespectrumwereanalyzedtoverifythesingle-electrontransportcharacteristicsofthedevice.Furtherresearchwasconductedonthetransportcharacteristicsofone-dimensionalZnOnanowiredevices,includingconductivity,transmittance,sizeeffectandotheraspects.Theresultsshowedthattheone-dimensionalZnOnanowiredevicehasgoodconductivityandtransmittance,andstrongsizeeffect.Thenextstepofresearchwillfocusonoptimizingdevicestructure,improvingdeviceperformance,andstudyingdevicenoiseperformance,etc.Keywords:one-dimensionalZnOnanostructures;single-electrondevices;current-voltagecharacteristics;transportcharacteristics;sizeeffect.