Cr掺杂ZnO薄膜的结构和性质研究的中期报告摘要：本中期报告介绍了对Cr掺杂ZnO薄膜的结构和性质的研究进展。采用射频磁控溅射技术，制备了不同掺杂浓度的Cr掺杂ZnO薄膜。使用X射线衍射仪（XRD）、扫描电子显微镜（SEM）和能谱仪（EDS）等手段对其结构和形貌进行了表征。实验结果表明，随着掺杂浓度的增加，Cr掺杂ZnO薄膜的结晶度有所降低。SEM观察发现，掺杂浓度为0.5%时，薄膜表面形貌最为光滑且颗粒尺寸较大。EDS分析证明，掺杂浓度为0.5%时，Cr在ZnO晶体中的掺杂浓度最高。对Cr掺杂ZnO薄膜进行了光学性质和电学性质的研究。结果表明，随着掺杂浓度的增加，薄膜的透光率有所下降，而带隙宽度有所增加。同时，掺杂浓度为0.5%时，薄膜的电学性质最佳，其电学性能值达到了最高点。这些结果对于深入研究Cr掺杂ZnO薄膜的性质和应用具有一定的指导意义。关键词：Cr掺杂ZnO薄膜；结构表征；性质研究Abstract：ThismidtermreportintroducestheresearchprogressonthestructureandpropertiesofCr-dopedZnOfilm.Cr-dopedZnOfilmswithdifferentdopingconcentrationswerepreparedbyradiofrequencymagnetronsputteringtechnology.ThestructureandmorphologyofthefilmswerecharacterizedbyX-raydiffraction(XRD),scanningelectronmicroscopy(SEM)andenergydispersivespectrometer(EDS).TheexperimentalresultsshowthatthecrystallinityofCr-dopedZnOfilmdecreaseswiththeincreasingofdopingconcentration.SEMobservationrevealsthatthesurfacemorphologyofthefilmisthesmoothestandtheparticlesizeisthelargestwhenthedopingconcentrationis0.5%.EDSanalysisprovesthatthedopingconcentrationofCrinZnOcrystalisthehighestwhenthedopingconcentrationis0.5%.TheopticalandelectricalpropertiesoftheCr-dopedZnOfilmswerestudied.Theresultsshowthatthetransmittanceofthefilmsdecreasesandthebandgapwidthincreaseswiththeincreasingofdopingconcentration.Atthesametime,whenthedopingconcentrationis0.5%,theelectricalpropertiesofthefilmsarethebest,andtheelectricalperformancevaluereachesthehighestpoint.Theseresultshavecertainguidingsignificanceforin-depthstudyofthepropertiesandapplicationsofCr-dopedZnOfilms.Keywords:Cr-dopedZnOfilm;structuralcharacterization;propertyresearch