SnS、ZnO薄膜的制备与性能的研究的中期报告【摘要】本研究旨在制备SnS和ZnO薄膜，并研究其光电性能。通过磁控溅射法制备了SnS薄膜和ZnO薄膜，使用X射线衍射、扫描电子显微镜、透射电子显微镜和紫外-可见吸收光谱等表征手段对薄膜进行了分析。结果表明，SnS薄膜为单相结构，具有不错的晶体质量和晶粒形貌；ZnO薄膜也为单相结构，晶粒大小为40-60nm，薄膜表面较为光滑。光电性能测试表明，SnS薄膜具有约1.1eV的禁带宽度，表现出良好的光吸收和光电转化性能；ZnO薄膜表现出优异的紫外光响应性能。需要进一步研究薄膜的电学和光学性质。【关键词】SnS；ZnO；薄膜；磁控溅射；光电性能【Abstract】ThisstudyaimedtoprepareSnSandZnOthinfilmsandinvestigatetheiroptoelectronicproperties.SnSthinfilmsandZnOthinfilmswerepreparedbymagnetronsputtering,andthefilmswereanalyzedbyX-raydiffraction,scanningelectronmicroscopy,transmissionelectronmicroscopy,andultraviolet-visibleabsorptionspectroscopy.TheresultsshowedthattheSnSthinfilmhadasingle-phasestructurewithgoodcrystalqualityandgrainmorphology,whiletheZnOthinfilmalsohadasingle-phasestructurewithagrainsizeof40-60nmandarelativelysmoothsurface.OptoelectronicpropertytestsshowedthattheSnSthinfilmhadabandgapofabout1.1eV,exhibitinggoodlightabsorptionandphotoelectricconversionproperties,whiletheZnOthinfilmshowedexcellentultravioletlightresponse.Furtherinvestigationsareneededontheelectricalandopticalpropertiesofthefilms.【Keywords】SnS;ZnO;thinfilm;magnetronsputtering;optoelectronicproperty