PAGEII摘要半导体器件是现代高科技世界不可缺少的重要组成部分，以半导体器件为基础的电子技术在推动着人类社会发展中起着关键作用的同时，全球经济的飞速发展也给现代电子技术提出了更高的要求。而这些半导体器件是由许多的二极管、三极管等最基础的元器件所组成，在研究这些元器件的电学参数时，其中击穿电压是一项极其重要的参数。本文首先对对称线性缓变结中的空间电荷区的电场、电位分布及击穿电压进行了简单的阐述。然后介绍了一种可以得到非对称线性缓变结击穿电压严格表达式的方法，借助有效浓度梯度的定义,可以使双边非对称线性缓变结的击穿电压由对称线性缓变结的击穿电压公式或图表计算出来,并用此结果计算了一些典型双扩散结的击穿电压。最后应用等价掺杂转换理论，研究了不同扩散掺杂梯度和衬底浓度组合的非对称线性缓变结击穿特性。研究了最大耗尽层宽度在扩散侧和衬底侧的扩展，给出了它们随扩散掺杂梯度和衬底浓度组合的变化而出现的不同特点。本方法预言的最大击穿电压较之单纯的突变结和对称线性缓变结更接近于实际值，显示了等价掺杂转换理论计算非对称线性缓变P-N结击穿电压的有效性。关键词：击穿电压；有效掺杂浓度梯度；非对称线性缓变结；等价掺杂转换理论AbstractSemiconductordevicesareindispensableandimportantcomponentofthemodernhigh-techworld,semiconductordevicesarethebasisofelectronictechnologywhichpromotethedevelopmentofhumansociety;atthesametime,therapiddevelopmentofglobaleconomyhaveproposedhigherdemandtosemiconductordevices.Whilesemiconductordevicesarecomponentofmanydiodesandtransistorsthatarethebasicofcomponents,researchingtheelectricalparametersofcomponents,thebreakdownvoltageofcomponentisanimportantparameter.Inthisarticle.Firstly,wesimplyexposittheelectricfieldspacechargeregion,potentialdistributionandbreakdownvoltageofthesymmetriclinearlygradedjunction.Secondly,weintroduceamethodwhichcangetthestrictformulaofthebreakdownvoltageoftheasymmetriclinearlygradedjunction,byusingthedefinitionofeffectivedopinggradientforasymmetriclinearlygradedjunction,theanalyticalsolutionsforthebreakdowncriticalparametersforthedoublesidedasymmetricandsinglesidedlinearlygradedjunctionsarederivedfromthesymmetriclinearlygradedjunction，thenusetheresulttosolutethebreakdownvoltageofthedoublediffusionjunction.Thelastbutnottheleast,inthispaperthecharacteristicsofthebreakdownvoltageofthedifferentconbinationsofthedopingconcentrationgradientandthesubstratedopingconcentrationoftheasymmetriclinearlygradedjunctionwasresearched,theexpansionofthemaximumdepletionwidthofthediffusionsideandthesubstratesideatbreakdownwasalsoresearched,atthesametime,thechangecharacterswiththeconbinationsofthedopingconcentrationgradientandthesubst