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HuazhongUniversityofScienceandTechnologyTheDepartmentofElectronicsandInformationEngineeringPART1SEMICONDUCTORDEVICESANDBASICAPPLICATIONSChapter1SemiconductorMaterialsandDiodesChapter2DiodeCircuitsChapter3TheField-EffectTransistorChapter4BasicFETAmplifiersChapter5TheBipolarJunctionTransistorChapter6BasicBJTAmplifiersChapter7FrequencyResponseChapter8OutputStagesandPowerAmplifiersPART2ANALOGELECTRONICSChapter9IdealOperationalAmplifiersandOp-AmpCircuitsChapter10IntegratedCircuitBiasingandActiveLoadsChapter11DifferentialandMultistageAmplifiersChapter12FeedbackandStabilityChapter13OperationalAmplifierCircuitsChapter14NonidealEffectsinOperationalAmplifierCircuitsChapter15ApplicationsandDesignofIntegratedCircuitsChapter5TheBipolarJunctionTransistor5.2DCAnalysisofTransistorCircuits5.2DCAnalysisofTransistorCircuitsTransistorCircuitsVi=0vi=Vsint5.2DCAnalysisofTransistorCircuits5.2.1DCAnalysisofCE5.2.1DCAnalysisofCE5.2.1DCAnalysisofCE1.Amplifier1.Amplifier5.2.3BipolarTransistorBiasingopenACcircuitRBSketchtheDCcircuitandACEquivalentcircuitSketchtheDCcircuitandACEquivalentcircuitSketchtheDCcircuitandACEquivalentcircuit5.2.3BipolarTransistorBiasing5.2.3BipolarTransistorBiasing2.VoltagedividerbiasingandbiasingstabilityActiveregionmodel—amplification(1)Saturationregionmodel(2)Cutoffregionmodel(3)Inverted(reverse)model(4)Review：Review：2.Voltagedividerbiasingandbiasingstability（P337）(2).Voltagedividerbiasing(2).VoltagedividerbiasingAnalysisofthefour-resistorbiascircuitReviewQuestionsReviewQuestionsReviewQuestionsSummary:howtodeterminetheworkregionoftheBJT?Summary:howtodeterminetheworkregionoftheBJT?Summary:howtodeterminetheworkregionoftheBJT?ReviewQuestionsReviewQuestionsReviewQuestionsCEcircuitHomework:5.52UsingthecircuitinFigureP5.52,designabias-stablecircuitsuchthatICQ=0.8mAandVCEQ=5V.Let=125.DetermineICQ,VCEQ,R1,R2.QuestionsandAnswers
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