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HuazhongUniversityofScienceandTechnologyTheDepartmentofElectronicsandInformationEngineeringPART1SEMICONDUCTORDEVICESANDBASICAPPLICATIONSChapter1SemiconductorMaterialsandDiodesChapter2DiodeCircuitsChapter3TheField-EffectTransistorChapter4BasicFETAmplifiersChapter5TheBipolarJunctionTransistorChapter6BasicBJTAmplifiersChapter7FrequencyResponseChapter8OutputStagesandPowerAmplifiersPART2ANALOGELECTRONICSChapter9IdealOperationalAmplifiersandOp-AmpCircuitsChapter10IntegratedCircuitBiasingandActiveLoadsChapter11DifferentialandMultistageAmplifiersChapter12FeedbackandStabilityChapter13OperationalAmplifierCircuitsChapter14NonidealEffectsinOperationalAmplifierCircuitsChapter15ApplicationsandDesignofIntegratedCircuitsCh4BasicFETAmplifiers4.1BasicMOSFETCircuits4.1BasicMOSFETCircuitsEXAMPLEVDS>(VGS-VT)4.1.2ACAnalysisofMOSFETCircuits2.Small-SignalEquivalentCircuit2.Small-SignalEquivalentCircuit(2)VoltageGainWhatisthedifferencebetweenthetwocircuits?SaturationregionExample1Example13.Comparingthreebasiccircuitoffieldeffecttransistor(1)Voltagegain(2)InputresistanceExample3Example30input，Example3TheiD–vGSCharacteristicinSaturationHomeworkP2013.37P2744.14P277D4.27QuestionsandAnswers
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