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AbstractGaNfilmshavebeenfabricatedbyammoniatingelectrodepositedfilms.WehaveinvestigatedtheinfluenceofelectrodepositionparametersonthemorphologiesandstructuresofelectrodepositedlayersonSi(100)subtratesbyusingSEMandXRD.IntroductionGalliumnitrideisadirectbandgapsemiconductorwithwidebandgapenergyof3.4eVatroomtemperature[1,2].Ithasbeenusedinvariousoptoelectronicaldevices,suchasLEDs,lasers,transistorsandUVdetectors.TheopticalandelectronicpropertiesofGaNfilmsandnanostructuresarestronglydependentonthegrowthmethods.GaNfilmswithhighqualityinoptoelectronicdeviceshavemainlybeenfabricatedusingmolecularbeamepitaxy(MBE)andmetalorganicchemicalvapourdeposition(MOVCD).Therehavebeeneffortstodeveloptechniquestoovercomethelimitationsofthesemethods,suchastheslowgrowthspeedofMBEandtheexpensiveGasourcerequiredbyMOCVD[1-3].Theelectrodepositiontechniqueiscommonlyusedtofabricatesemiconductors[4].However,thereportsusingthistechniqueforGaNarescant[5].InthisstudywehavesuccessfullyfabricatedGaNfilmsbyammoniatingelectrodepositedlayers.ExperimentalSiliconsubstratesweresonicatedsequentiallyintoluene,acetone,ethanolanddeionizedwater.Thesesubstrateswerethenetchedin5%hydrofluoricacidtoremovenativeSiO2beforeuse.Themixedsolutionof128mgofGallium(III)nitratehydrate(Ga(NO3)3xH2O)(99.9%,Aldrich)and80mgofammoniumnitrate(NH4NO3)(BDHChemicalsltd)in30mldeionizedwaterwasusedinthisexperiment.Asimpletwoelectrodesdepositingsetupwasemployed.Aplatinumfoilwasusedastheanodewhilethesubstratewasusedasthecathode.AKeithley2400sourcemeterwasemployedasthepowersource.Theannealingoftheaselectrodepositedlayerswascarriedoutinammoniaambientat970oCinaquartztube.ThemorphologiesoftheobtainedfilmsampleswereobservedbyusingJeolJSM-7001Ffieldemissionscanningelectronmicroscope(SEM).EnergydispersiveX-rayspectroscopyattachedtotheSEMwasemployedtoanalysizethecompositionoffilms.ThecrystalstructuresoftheannealedsampleswereinvestigatedusingaBrukerAXSSMARTCCDdiffractometer.ResultsanddiscussionsTwot
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